GaN Buy Now Papers Validation Tech Specs Applications Overview
Technical Papers
Ostendo and its partners continue to publish numerous
technical papers about our unique GaN material.
- Modeling of III-Nitride Multiple Quantum Well Light Emitting Structures
Invited Article in Special Issue on Numerical Simulation of Optoelectronic Devices
IEEE Journal of Selected Topics in Quantum Electronics, to be published September 2013. PDF »© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
- A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching
ISRN Condensed Matter Physics, July 2012. PDF
- Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters
Journal of Applied Physics, May 2012. PDF »This article appeared in
Journal of Applied Physics, May 2012 and may be found at
http://link.aip.org/link/?JAP/111/103113. Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Effect of active QW population on optical characteristics of polar, semipolar and nonpolar III-nitride light emitters
Semiconductor Science and Technology, vol. 27, January 2012. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Injection efficiency and optical gain characteristics of polar and nonpolar III-nitride light emitters
Physica Status Solidi, December 2011. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Non-Equilibrium Quantum Well Populations and Optical Characteristics of III-Nitride Lasers and Light-Emitting Diodes
COMSOL Conference 2011, Boston, MA, USA, October 2011. PDF
- Injection characteristics of polar and nonpolar multiple-QW structures and active region ballistic overshoot
Physica Status Solidi, April 2011. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Semi-polar nitride surfaces and heterostructures
Featured Article in Physica Status Solidi, March 2011. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Drift-Diffusion and Ballistic Transport Modeling in III-Nitride Multiple-QW Light Emitting Structures
COMSOL Conference 2010, Boston, MA, USA, October 2010. PDF
- Inhomogeneous injection in polar and nonpolar III-nitride light-emitters
Solid-State Electronics, August 2010. PDF
- Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures
Journal of Applied Physics, May 2010. PDF »This article appeared in
Journal of Applied Physics, May 2010 and may be found at
http://link.aip.org/link/?jap/107/103106. Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Structural characterization of thick (11-2) GaN layers grown by HVPE on m-plane sapphire
Physica Status Solidi, May 2010. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
Physica Status Solidi, May 2010. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Software Package for Modeling III-Nitride QW Laser Diodes and Light Emitting Devices
COMSOL Conference 2009, Boston, MA, USA, October 2009. PDF
- GaN layer growth by HVPE on m-plane sapphire substrates
Physica Status Solidi, May 2009. PDF »We apologize, but we are unable to post this article online. However, a copy of the article can be sent upon request.
- Optimum quantum well width for III-nitride nonpolar and semipolar laser diodes
Applied Physics Letters, January 2009. PDF »This article appeared in
Applied Physics Letters, January 2009 and may be found at
http://link.aip.org/link/?apl/94/021108. Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Optical characteristics of III-nitride quantum wells with different crystallographic orientations
Journal of Applied Physics, January 2009. PDF »This article appeared in
Journal of Applied Physics, January 2009 and may be found at
http://link.aip.org/link/?jap/105/013112. Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
- Modeling of III-Nitride Quantum Wells with Arbitrary Crystallographic Orientation for Nitride-Based Photonics
COMSOL Conference 2008, Boston, MA, USA, October 2008. PDF